Corial D250L PECVD system

Get maximum flexibility for deposition processes and substrate shapes with the Corial D250L PECVD system

Corial D250L PECVD system in brief

The Corial D250L PECVD tool is designed for low volume production over a wide range of applications for specialty semiconductor markets.

The Corial D250L is based on CORIAL’s unique reactor design. It houses an isothermal, pressurized reactor within a vacuum vessel, which is different from conventional PECVD reactors with heated substrate holders. Featuring a next-generation gas showerhead and symmetrical pumping, the Corial D250L delivers excellent deposition uniformity for a wide variety of applications.

Equipped with a vacuum load lock, the Corial D250L delivers stable process conditions, short pump down times, and enhanced throughput.

 

COSMA Pulse software enables pulsing of any recipe parameter. The pulsing feature enlarges the process window to achieve better control of film properties, and supports Atomic Layer Deposition (ALD) in the Corial D250L.

The Corial D250L PECVD system achieves rapid and uniform deposition for a wide range of materials including SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films, on wafers up to 200 mm diameter. Optimizing film stress control is simple to accomplish thanks to the reactor’s symmetrical design.

This PECVD system can operate for years without the need for manual cleaning.

Key benefits

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BEST REPRODUCIBILITY

Precise and uniform temperature control of the substrate and reactor walls delivers excellent deposition repeatability and uniformity

The pressurized, symmetrically-pumped reactor ensures high-quality films free of pinholes

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HIGH DEPOSITION RATES

With an isothermal and pressurized reactor, the Corial D250L delivers uniform, high deposition rates on wafer sizes up to 200 mm

Typical deposition rates:  520 nm/min for SiO2, 250 nm/min for Si3N4, 150 nm/min for SiOCH, 100 nm/min for SiC

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PROCESS FLEXIBILITY

COSMA Pulse software-controlled pulsing of any process parameters improves control of film properties and enables Atomic Layer Deposition (ALD) in the Corial D250L deposition system

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INCREASED UPTIME

Load-lock ensures fast loading/unloading and short pump down times

No manual cleaning of reactor or vacuum vessel required for many years of operation

Related processes

Typical materials that can be processed with the Corial D250L PECVD system include:

  • Silicon-based compounds : SiO2, Si3N4, SiOCH, SiOF, aSi-H
  • Hard materials: SiC
  • Organics

The Corial D250L can serve a variety of applications in specialty semiconductors markets including:

  • Optoelectronics
  • MEMS
  • Power devices
  • Wireless Communication
  • Integrated optics

Silicon Nitride (Si3N4) PECVD deposition process with tensile stress

MEMS

  • Deposition rate 210 nm/min
  • Refractive index 2.00
  • Stress 130 ± 50 MPa

High temperature Silicon Dioxide (SiO2) layer deposition for passivation

R&D

  • Deposition at 320°C
  • Refractive index 1.46
  • Stress -190 ± 50 MPa

Stress-less Silicon Nitride (Si3N4) PECVD deposition process

MEMS

  • Deposition rate 120 nm/min
  • Stress -10 ± 50 MPa
  • Deposition at 280°C

Silicon Dioxide (SiO2) layer deposition for passivation application

Optoelectronics

  • Deposition rate 270 nm/min
  • Refractive index 1.46
  • RF power 230 W

Upgrades

The Corial D250L PECVD system can be thoroughly customized with a wide range of features.

Additional gas inputs

Additional gas inputs

Additional gas inputs (up to 8) for more complex process gas combinations

COSMA Pulse software

COSMA Pulse software adds Atomic Layer Etching and Si DRIE (Bosch Processes) capabilities

COSMA Pulse software adds Atomic Layer Deposition capabilities to the Corial D250 by enabling pulsation of any process parameters – including gas flow rate, working pressure, RF power, LF power…

Variety of RF power supplies

Higher and lower watt power supplies with automatic matching network

Higher output power supplies with automatic matching network

Light tower

The signal light tower provides an easy-to-view indicator of the system’s processing status

Laser interferometry

End point detection by laser interferometry to enhance etch control through automated measurement of etch rate and etch depth

End point detection by laser interferometry to enhance process control through automated measurement of etch/deposition rate, etch depth and deposition thickness